Show Hamamatsu Avalanche Photo Diode 0712006383
This is all the information about APD 0712006383. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0712006383 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D11 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386 V |
| Dark current: |
17.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
289 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10201 |
| |
|
| Shipment: |
|
| Grid number: |
49 |
| Position in grid: |
16 |
| Arrival for irradiation: |
10. Jul 2016 |
| Sent for analysis after irradiation: |
22. Jul 2016 |
| Return for assembly: |
06. Oct 2016 |
| |
|
| Irradiation: |
|
| Date: |
12. Jul 2016 |
| Dose used: |
30 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
12. Jul 2016 |
| Temperature: |
80 °C |
| Duration: |
10 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.7086949 V T = -25 °C: 349.8704094 V |
| Voltage for Gain 150: |
T = +20 °C: 393.5751566 V T = -25 °C: 357.2487603 V |
| Voltage for Gain 200: |
T = +20 °C: 397.9263079 V T = -25 °C: 361.4031052 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.696266978 V-1 T = -25 °C: 4.966763252 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.357811446 V-1 T = -25 °C: 9.225388183 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.65133078 V-1 T = -25 °C: 14.49517227 V-1 |
| Break-through voltage: |
T = +20 °C: 413.6600654 V T = -25 °C: 376.9644052 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
