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Show Hamamatsu Avalanche Photo Diode 1617018136


This is all the information about APD 1617018136. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1617018136
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E08
Break-through voltage: 412 V
Voltage for Gain 100 (T=+25°C): 383.3 V
Dark current: 4.5 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 401
Position in Box: 2
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 383.9088908 V     T = -25 °C: 347.7283998 V
Voltage for Gain 150: T = +20 °C: 391.8097927 V     T = -25 °C: 355.2059221 V
Voltage for Gain 200: T = +20 °C: 396.193968 V     T = -25 °C: 359.4336369 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.589066803 V-1     T = -25 °C: 4.953489919 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.089371908 V-1     T = -25 °C: 9.139766734 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.1194027 V-1     T = -25 °C: 16.1653445 V-1
Break-through voltage: T = +20 °C: 412.0324737 V     T = -25 °C: 375.3255934 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 22:06:55 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:38:49 CET jreher Updated box and position via API.
09. Oct 2020 09:49:26 CEST jreher Updated APD location via API.
23. Jun 2016 11:41:00 CEST Tobias Imported from Hamamatsu datasheet.