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Show Hamamatsu Avalanche Photo Diode 1617018108


This is all the information about APD 1617018108. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1617018108
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C05
Break-through voltage: 413 V
Voltage for Gain 100 (T=+25°C): 384.2 V
Dark current: 3.6 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 396
Position in Box: 20
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 384.6399531 V     T = -25 °C: 348.8047418 V
Voltage for Gain 150: T = +20 °C: 392.5751622 V     T = -25 °C: 356.3373116 V
Voltage for Gain 200: T = +20 °C: 396.9705069 V     T = -25 °C: 360.5784305 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.343808765 V-1     T = -25 °C: 4.901085809 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.266362229 V-1     T = -25 °C: 8.957129204 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.41565739 V-1     T = -25 °C: 15.67347624 V-1
Break-through voltage: T = +20 °C: 412.8864925 V     T = -25 °C: 376.5884789 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 22:06:15 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:38:13 CET jreher Updated box and position via API.
09. Oct 2020 09:48:34 CEST jreher Updated APD location via API.
23. Jun 2016 11:40:59 CEST Tobias Imported from Hamamatsu datasheet.