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Show Hamamatsu Avalanche Photo Diode 1614017872


This is all the information about APD 1614017872. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1614017872
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C08
Break-through voltage: 420 V
Voltage for Gain 100 (T=+25°C): 391 V
Dark current: 3.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 316
Position in Box: 28
EP1 batch: none
EP1 batch after irradiation: 10589
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 392.017833 V     T = -25 °C: 355.4451893 V
Voltage for Gain 150: T = +20 °C: 399.9085562 V     T = -25 °C: 363.1028911 V
Voltage for Gain 200: T = +20 °C: 404.2924189 V     T = -25 °C: 367.4102703 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.583089367 V-1     T = -25 °C: 4.622410783 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.0354058 V-1     T = -25 °C: 9.085620491 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.0379046 V-1     T = -25 °C: 15.82567276 V-1
Break-through voltage: T = +20 °C: 419.5969962 V     T = -25 °C: 383.1409138 V
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
16. Apr 2021 22:03:39 CEST jreher Updated APD characteristics via API.
05. Feb 2021 11:28:58 CET jreher Updated box and position via API.
15. Oct 2020 13:41:56 CEST vwerner Updated APD batch assignment via API.
09. Oct 2020 09:47:44 CEST jreher Updated APD location via API.
23. Jun 2016 10:45:39 CEST Tobias Imported from Hamamatsu datasheet.