Show Hamamatsu Avalanche Photo Diode 1612017686
This is all the information about APD 1612017686. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1612017686 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B12 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
396.9 V |
| Dark current: |
3.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
403 |
| Position in Box: |
17 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10633 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.0235587 V T = -25 °C: 360.4343484 V |
| Voltage for Gain 150: |
T = +20 °C: 405.0121288 V T = -25 °C: 368.3015524 V |
| Voltage for Gain 200: |
T = +20 °C: 409.4495861 V T = -25 °C: 372.6491542 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.483543982 V-1 T = -25 °C: 4.582679308 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.787630639 V-1 T = -25 °C: 8.715819338 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.30159783 V-1 T = -25 °C: 15.11350236 V-1 |
| Break-through voltage: |
T = +20 °C: 425.3184351 V T = -25 °C: 388.7242231 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
