Show Hamamatsu Avalanche Photo Diode 0711006329
This is all the information about APD 0711006329. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0711006329 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0711006329/2415027108 |
| Unit: |
#1227 (barcode 1309011865) |
| Preamp: |
0 |
| Current location: |
Giessen (mounted in Slice) |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.3 V |
| Dark current: |
16.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
292 |
| Position in Box: |
37 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10206 |
| |
|
| Shipment: |
|
| Grid number: |
47 |
| Position in grid: |
1 |
| Arrival for irradiation: |
20. Jun 2016 |
| Sent for analysis after irradiation: |
23. Jun 2016 |
| Return for assembly: |
11. Jul 2016 |
| |
|
| Irradiation: |
|
| Date: |
21. Jun 2016 |
| Dose used: |
37 Gy |
| Temperature: |
25 °C |
| Position: |
1 |
| Bias voltage: |
320 V (connection unknown) |
| |
|
| Annealing: |
|
| Date: |
21. Jun 2016 |
| Temperature: |
80 °C |
| Duration: |
8 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.6982299 V T = -25 °C: 349.1629859 V |
| Voltage for Gain 150: |
T = +20 °C: 392.6485038 V T = -25 °C: 356.5788939 V |
| Voltage for Gain 200: |
T = +20 °C: 397.0658868 V T = -25 °C: 360.7375506 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.319242114 V-1 T = -25 °C: 4.829753985 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.168411122 V-1 T = -25 °C: 9.808259159 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.16304497 V-1 T = -25 °C: 15.58214158 V-1 |
| Break-through voltage: |
T = +20 °C: 412.8665854 V T = -25 °C: 376.3310158 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
