Show Hamamatsu Avalanche Photo Diode 0711006315
This is all the information about APD 0711006315. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0711006315 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G04 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.3 V |
| Dark current: |
13.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
379 |
| Position in Box: |
21 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10579 |
| |
|
| Shipment: |
|
| Grid number: |
46 |
| Position in grid: |
19 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
23. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
11. Aug 2017 |
| Dose used: |
46 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
387.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.7104555 V T = -25 °C: 351.1051218 V |
| Voltage for Gain 150: |
T = +20 °C: 394.6627559 V T = -25 °C: 358.5937424 V |
| Voltage for Gain 200: |
T = +20 °C: 399.0758857 V T = -25 °C: 362.7938892 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.329295561 V-1 T = -25 °C: 4.816960196 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.183912667 V-1 T = -25 °C: 9.762406578 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.2810613 V-1 T = -25 °C: 15.45127238 V-1 |
| Break-through voltage: |
T = +20 °C: 413.6771709 V T = -25 °C: 378.6616401 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
