Show Hamamatsu Avalanche Photo Diode 1608017326
This is all the information about APD 1608017326. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1608017326 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G05 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
386.2 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
388 |
| Position in Box: |
36 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.4412693 V T = -25 °C: 351.5294862 V |
| Voltage for Gain 150: |
T = +20 °C: 395.2304736 V T = -25 °C: 359.1650305 V |
| Voltage for Gain 200: |
T = +20 °C: 399.5574351 V T = -25 °C: 363.3901876 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.459705536 V-1 T = -25 °C: 4.733870635 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.822106097 V-1 T = -25 °C: 10.11598854 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.41649029 V-1 T = -25 °C: 16.43788001 V-1 |
| Break-through voltage: |
T = +20 °C: 406.7234166 V T = -25 °C: 378.5226406 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
