Show Hamamatsu Avalanche Photo Diode 1608017317
This is all the information about APD 1608017317. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1608017317 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B07 |
Break-through voltage: |
418 V |
Voltage for Gain 100 (T=+25°C): |
390.8 V |
Dark current: |
4.4 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
388 |
Position in Box: |
27 |
EP1 batch: |
none |
EP1 batch after irradiation: |
none |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 391.1754542 V T = -25 °C: 354.7225708 V |
Voltage for Gain 150: |
T = +20 °C: 398.9734121 V T = -25 °C: 362.3048956 V |
Voltage for Gain 200: |
T = +20 °C: 403.2980806 V T = -25 °C: 366.5412314 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.562553278 V-1 T = -25 °C: 4.965818751 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.07398633 V-1 T = -25 °C: 9.334353843 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.19323858 V-1 T = -25 °C: 15.70336555 V-1 |
Break-through voltage: |
T = +20 °C: 419.3915241 V T = -25 °C: 381.813867 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history