Show Hamamatsu Avalanche Photo Diode 1605017137
This is all the information about APD 1605017137. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1605017137 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B10 |
Break-through voltage: |
428 V |
Voltage for Gain 100 (T=+25°C): |
399.6 V |
Dark current: |
3.6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
301 |
Position in Box: |
37 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10370 |
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Shipment: |
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Grid number: |
443 |
Position in grid: |
17 |
Arrival for irradiation: |
30. Oct 2017 |
Sent for analysis after irradiation: |
17. Nov 2017 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
16. Nov 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
3 |
Bias voltage: |
399.6 V (connected) |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 400.3565248 V T = -25 °C: 363.7769236 V |
Voltage for Gain 150: |
T = +20 °C: 408.3435526 V T = -25 °C: 371.6238674 V |
Voltage for Gain 200: |
T = +20 °C: 412.6817071 V T = -25 °C: 376.0492019 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.427475494 V-1 T = -25 °C: 4.765228239 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.568319784 V-1 T = -25 °C: 8.402526099 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.57984032 V-1 T = -25 °C: 14.46263534 V-1 |
Break-through voltage: |
T = +20 °C: 428.5131354 V T = -25 °C: 391.0914858 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history