Show Hamamatsu Avalanche Photo Diode 1605017101
This is all the information about APD 1605017101. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1605017101 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B03 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
392.9 V |
| Dark current: |
3.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
338 |
| Position in Box: |
38 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10696 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.9106067 V T = -25 °C: 356.2644568 V |
| Voltage for Gain 150: |
T = +20 °C: 400.8857747 V T = -25 °C: 363.9652951 V |
| Voltage for Gain 200: |
T = +20 °C: 405.3147687 V T = -25 °C: 368.2980122 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.57306191 V-1 T = -25 °C: 4.652253931 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.962473099 V-1 T = -25 °C: 9.130665155 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.89472884 V-1 T = -25 °C: 14.18279069 V-1 |
| Break-through voltage: |
T = +20 °C: 418.6547484 V T = -25 °C: 383.2188047 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
