Show Hamamatsu Avalanche Photo Diode 1604017041
This is all the information about APD 1604017041. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1604017041 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1604017041/2905032819 |
| Unit: |
#3545 (barcode 1309035663) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.3 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
302 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10370 |
| |
|
| Shipment: |
|
| Grid number: |
439 |
| Position in grid: |
14 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
389.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.908922 V T = -25 °C: 353.1875837 V |
| Voltage for Gain 150: |
T = +20 °C: 397.7285139 V T = -25 °C: 360.8011295 V |
| Voltage for Gain 200: |
T = +20 °C: 402.0684498 V T = -25 °C: 365.0291053 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.601492767 V-1 T = -25 °C: 4.489561691 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.168840395 V-1 T = -25 °C: 9.517240228 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.25768082 V-1 T = -25 °C: 14.48227377 V-1 |
| Break-through voltage: |
T = +20 °C: 417.4354485 V T = -25 °C: 380.638228 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history