Show Hamamatsu Avalanche Photo Diode 1604017030
This is all the information about APD 1604017030. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1604017030 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1407015568/1604017030 |
| Unit: |
#3848 (barcode 1309039890) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G06 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.5 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
301 |
| Position in Box: |
42 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10370 |
| |
|
| Shipment: |
|
| Grid number: |
439 |
| Position in grid: |
3 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
388.5 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.6001315 V T = -25 °C: 353.4966054 V |
| Voltage for Gain 150: |
T = +20 °C: 397.5303147 V T = -25 °C: 361.1302129 V |
| Voltage for Gain 200: |
T = +20 °C: 401.9171317 V T = -25 °C: 365.3837134 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.360587197 V-1 T = -25 °C: 4.426315092 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.433925163 V-1 T = -25 °C: 9.214595589 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.53757953 V-1 T = -25 °C: 16.1199003 V-1 |
| Break-through voltage: |
T = +20 °C: 410.3958942 V T = -25 °C: 380.5433294 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
