Show Hamamatsu Avalanche Photo Diode 1604016979
This is all the information about APD 1604016979. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1604016979 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C08 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
391.2 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
334 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10765 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.5012754 V T = -25 °C: 356.1451232 V |
| Voltage for Gain 150: |
T = +20 °C: 400.392299 V T = -25 °C: 363.8255407 V |
| Voltage for Gain 200: |
T = +20 °C: 404.7513397 V T = -25 °C: 368.1276994 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.386705506 V-1 T = -25 °C: 4.689110594 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.577457033 V-1 T = -25 °C: 9.224712101 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.87768115 V-1 T = -25 °C: 14.42128605 V-1 |
| Break-through voltage: |
T = +20 °C: 419.1172345 V T = -25 °C: 382.8203821 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
