Show Hamamatsu Avalanche Photo Diode 1603016934
This is all the information about APD 1603016934. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1603016934 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3406036834/1603016934 |
| Unit: |
#3851 (barcode 1309039920) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D03 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.2 V |
| Dark current: |
6.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
302 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10498 |
| |
|
| Shipment: |
|
| Grid number: |
435 |
| Position in grid: |
10 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
389.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.6591157 V T = -25 °C: 353.4727967 V |
| Voltage for Gain 150: |
T = +20 °C: 397.6197683 V T = -25 °C: 361.0925904 V |
| Voltage for Gain 200: |
T = +20 °C: 402.0177729 V T = -25 °C: 365.3786137 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.350371962 V-1 T = -25 °C: 4.617153644 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.26629616 V-1 T = -25 °C: 9.160748094 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.46219234 V-1 T = -25 °C: 14.2119286 V-1 |
| Break-through voltage: |
T = +20 °C: 417.5227684 V T = -25 °C: 381.0552732 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history