Show Hamamatsu Avalanche Photo Diode 1603016932
This is all the information about APD 1603016932. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1603016932 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D15 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
394.7 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
302 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10498 |
| |
|
| Shipment: |
|
| Grid number: |
435 |
| Position in grid: |
8 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
394.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.9838802 V T = -25 °C: 356.855702 V |
| Voltage for Gain 150: |
T = +20 °C: 400.8670919 V T = -25 °C: 362.7299179 V |
| Voltage for Gain 200: |
T = +20 °C: 405.2406792 V T = -25 °C: 368.9936457 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.562114861 V-1 T = -25 °C: 16.64686617 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.046214261 V-1 T = -25 °C: 24.43677792 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06089989 V-1 T = -25 °C: 23.83852303 V-1 |
| Break-through voltage: |
T = +20 °C: 417.6301849 V T = -25 °C: 384.0248035 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history