Show Hamamatsu Avalanche Photo Diode 1603016930
This is all the information about APD 1603016930. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1603016930 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1603016930/2404026223 |
| Unit: |
#2616 (barcode 1309029501) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G07 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
387.6 V |
| Dark current: |
6.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
302 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10498 |
| |
|
| Shipment: |
|
| Grid number: |
435 |
| Position in grid: |
6 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
387.6 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.0015632 V T = -25 °C: 351.0047146 V |
| Voltage for Gain 150: |
T = +20 °C: 396.9564401 V T = -25 °C: 358.3382491 V |
| Voltage for Gain 200: |
T = +20 °C: 401.3761154 V T = -25 °C: 363.4240606 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.569410544 V-1 T = -25 °C: 13.07631167 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.954242902 V-1 T = -25 °C: 23.34718711 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.84525729 V-1 T = -25 °C: 24.47821674 V-1 |
| Break-through voltage: |
T = +20 °C: 416.9241214 V T = -25 °C: 380.1708381 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history