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Show Hamamatsu Avalanche Photo Diode 0711006270


This is all the information about APD 0711006270. If it is wrong, edit the data.

Subdetector specification:  
Serial: 0711006270
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: E06
Break-through voltage: 416 V
Voltage for Gain 100 (T=+25°C): 386.8 V
Dark current: 14.2 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 44
Position in grid: 19
Arrival for irradiation: 20. Jun 2016
Sent for analysis after irradiation: 08. Jul 2016
Return for assembly: 04. Aug 2016
   
Irradiation:  
Date: 30. Jun 2016
Dose used: 30 Gy
Temperature: 25 °C
Position: 1
Bias voltage: 320 V     (connection unknown)
   
Annealing:  
Date: 01. Jul 2016
Temperature: 80 °C
Duration: 8 h
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
19. Jan 2017 11:13:46 CET tobias Added irradiation/annealing data after fixing PSL S/N issue.
18. Jan 2017 16:28:36 CET Tobias Assigned to grid via information extracted from APD DB.
22. Jun 2016 15:13:07 CEST Tobias Imported from Hamamatsu datasheet.