Show Hamamatsu Avalanche Photo Diode 1602016855
This is all the information about APD 1602016855. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016855 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
425 V |
| Voltage for Gain 100 (T=+25°C): |
396.6 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
269 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10493 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 396.6651593 V T = -25 °C: 360.0390517 V |
| Voltage for Gain 150: |
T = +20 °C: 404.5813696 V T = -25 °C: 367.9394549 V |
| Voltage for Gain 200: |
T = +20 °C: 409.0060855 V T = -25 °C: 369.4591256 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.352202817 V-1 T = -25 °C: 4.731777069 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.399105392 V-1 T = -25 °C: 10.23783871 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.33238494 V-1 T = -25 °C: 92.15873879 V-1 |
| Break-through voltage: |
T = +20 °C: 419.6603362 V T = -25 °C: 388.7637935 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
