Show Hamamatsu Avalanche Photo Diode 1602016838
					
					This is all the information about APD 1602016838. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
							  | 
						
						
							| Serial: | 
							1602016838 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							Bochum | 
						
						
							|   | 
							  | 
						
						
							| Installation information: | 
							  | 
						
						
							| Label: | 
							none | 
						
						
							|   | 
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							| Manufacturer information: | 
							  | 
						
						
							| Wafer position: | 
							F07 | 
						
						
							| Break-through voltage: | 
							418 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							390.6 V | 
						
						
							| Dark current: | 
							7.2 nA | 
						
						
							|   | 
							  | 
						
						
							| Screening Logistics: | 
							  | 
						
						
							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							302 | 
						
						
							| Position in Box: | 
							33 | 
						
						
							| EP1 batch: | 
							none | 
						
						
							| EP1 batch after irradiation: | 
							10371 | 
						
						
							|   | 
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							| Shipment: | 
							  | 
						
						
							| Grid number: | 
							431 | 
						
						
							| Position in grid: | 
							15 | 
						
						
							| Arrival for irradiation: | 
							29. Sep 2017 | 
						
						
							| Sent for analysis after irradiation: | 
							20. Oct 2017 | 
						
						
							| Return for assembly: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Irradiation: | 
							  | 
						
						
							| Date: | 
							20. Oct 2017 | 
						
						
							| Dose used: | 
							45 Gy | 
						
						
							| Temperature: | 
							20 °C | 
						
						
							| Position: | 
							4 | 
						
						
							| Bias voltage: | 
							390.6 V     (connected) | 
						
						
							|   | 
							  | 
						
						
							| Annealing: | 
							  | 
						
						
							| Date: | 
							none | 
						
						
							| Temperature: | 
							none | 
						
						
							| Duration: | 
							none | 
						
						
							|   | 
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							| Measurement results: | 
							  | 
						
						
							| Voltage for Gain 100: | 
							T = +20 °C: 390.6480335 V     T = -25 °C: 354.2840436 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 398.5471436 V     T = -25 °C: 361.907076 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 402.9138978 V     T = -25 °C: 366.1865401 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.386333462 V-1     T = -25 °C: 4.709412101 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 8.55513157 V-1     T = -25 °C: 9.32571718 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 14.852431 V-1     T = -25 °C: 14.65840838 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 418.2587813 V     T = -25 °C: 381.7502856 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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