Show Hamamatsu Avalanche Photo Diode 1602016832
This is all the information about APD 1602016832. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016832 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1602016832/1601016739 |
| Unit: |
#2720 (barcode 1309032334) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E09 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
391 V |
| Dark current: |
7.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
302 |
| Position in Box: |
30 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10371 |
| |
|
| Shipment: |
|
| Grid number: |
431 |
| Position in grid: |
11 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
20. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
391 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.3490788 V T = -25 °C: 354.8213703 V |
| Voltage for Gain 150: |
T = +20 °C: 399.2793394 V T = -25 °C: 362.4626711 V |
| Voltage for Gain 200: |
T = +20 °C: 403.6740311 V T = -25 °C: 366.7449348 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.436167473 V-1 T = -25 °C: 4.839449862 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.691492899 V-1 T = -25 °C: 8.785725684 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.11070631 V-1 T = -25 °C: 15.33008798 V-1 |
| Break-through voltage: |
T = +20 °C: 418.8182794 V T = -25 °C: 382.0933302 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history