Show Hamamatsu Avalanche Photo Diode 1602016826
This is all the information about APD 1602016826. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016826 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.4 V |
| Dark current: |
7.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
361 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10553 |
| |
|
| Shipment: |
|
| Grid number: |
431 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
20. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
388.4 V (not connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.9381267 V T = -25 °C: 352.729391 V |
| Voltage for Gain 150: |
T = +20 °C: 396.8419478 V T = -25 °C: 360.3014528 V |
| Voltage for Gain 200: |
T = +20 °C: 401.2387853 V T = -25 °C: 364.5606487 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.596740661 V-1 T = -25 °C: 4.556128111 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.08283876 V-1 T = -25 °C: 8.984202488 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.11197505 V-1 T = -25 °C: 15.81693631 V-1 |
| Break-through voltage: |
T = +20 °C: 416.764731 V T = -25 °C: 380.2787363 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history