Show Hamamatsu Avalanche Photo Diode 1602016819
This is all the information about APD 1602016819. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016819 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1707018910/1602016819 |
| Unit: |
#3847 (barcode 1309039883) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.2 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
302 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10371 |
| |
|
| Shipment: |
|
| Grid number: |
431 |
| Position in grid: |
0 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
20. Oct 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
20. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
389.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.7152371 V T = -25 °C: 353.4828445 V |
| Voltage for Gain 150: |
T = +20 °C: 397.6654089 V T = -25 °C: 361.0877884 V |
| Voltage for Gain 200: |
T = +20 °C: 402.0688521 V T = -25 °C: 365.3766394 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.326945703 V-1 T = -25 °C: 4.642036624 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.223120983 V-1 T = -25 °C: 9.175650694 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.38461081 V-1 T = -25 °C: 14.22801061 V-1 |
| Break-through voltage: |
T = +20 °C: 418.1850692 V T = -25 °C: 381.5227543 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
