Show Hamamatsu Avalanche Photo Diode 1602016816
This is all the information about APD 1602016816. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016816 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1602016816/1502016570 |
| Unit: |
#866 (barcode 1309009497) |
| Preamp: |
4439 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C03 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
388 V |
| Dark current: |
6.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
46 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10075 |
| |
|
| Shipment: |
|
| Grid number: |
430 |
| Position in grid: |
17 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.8538643 V T = -25 °C: 351.7514919 V |
| Voltage for Gain 150: |
T = +20 °C: 395.8643011 V T = -25 °C: 359.3996904 V |
| Voltage for Gain 200: |
T = +20 °C: 400.2972483 V T = -25 °C: 363.6412781 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.785912471 V-1 T = -25 °C: 4.719424728 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.428307754 V-1 T = -25 °C: 8.222621593 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.21902869 V-1 T = -25 °C: 16.33144524 V-1 |
| Break-through voltage: |
T = +20 °C: 415.6117933 V T = -25 °C: 379.1019066 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
