Show Hamamatsu Avalanche Photo Diode 1602016815
This is all the information about APD 1602016815. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016815 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E01 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.4 V |
| Dark current: |
6.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
46 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10075 |
| |
|
| Shipment: |
|
| Grid number: |
430 |
| Position in grid: |
16 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.3314515 V T = -25 °C: 350.2813251 V |
| Voltage for Gain 150: |
T = +20 °C: 394.3261558 V T = -25 °C: 357.8669861 V |
| Voltage for Gain 200: |
T = +20 °C: 398.8219323 V T = -25 °C: 362.1534988 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.119236685 V-1 T = -25 °C: 4.88571074 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.000878388 V-1 T = -25 °C: 9.095552198 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.19049777 V-1 T = -25 °C: 15.29976139 V-1 |
| Break-through voltage: |
T = +20 °C: 413.6863407 V T = -25 °C: 377.2313935 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history