Show Hamamatsu Avalanche Photo Diode 1602016809
This is all the information about APD 1602016809. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1602016809 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
388.5 V |
| Dark current: |
7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
46 |
| Position in Box: |
17 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10075 |
| |
|
| Shipment: |
|
| Grid number: |
430 |
| Position in grid: |
10 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 403.1480355 V T = -25 °C: 352.7605 V |
| Voltage for Gain 150: |
T = +20 °C: 412.2600243 V T = -25 °C: 360.4217039 V |
| Voltage for Gain 200: |
T = +20 °C: 418.6287703 V T = -25 °C: 364.7071908 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 3.857562377 V-1 T = -25 °C: 5.108025908 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.986165167 V-1 T = -25 °C: 9.746674669 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 4.755826646 V-1 T = -25 °C: 13.98301927 V-1 |
| Break-through voltage: |
T = +20 °C: 423.5860243 V T = -25 °C: 380.8303397 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
