Show Hamamatsu Avalanche Photo Diode 1601016795
This is all the information about APD 1601016795. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016795 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D12 |
| Break-through voltage: |
425 V |
| Voltage for Gain 100 (T=+25°C): |
396.4 V |
| Dark current: |
5.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
40 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10064 |
| |
|
| Shipment: |
|
| Grid number: |
428 |
| Position in grid: |
16 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 396.8103028 V T = -25 °C: 360.1881895 V |
| Voltage for Gain 150: |
T = +20 °C: 404.7760731 V T = -25 °C: 368.0097477 V |
| Voltage for Gain 200: |
T = +20 °C: 409.1955602 V T = -25 °C: 372.4011343 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.44039764 V-1 T = -25 °C: 4.430761037 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.471988946 V-1 T = -25 °C: 9.211654864 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.15357928 V-1 T = -25 °C: 13.91154683 V-1 |
| Break-through voltage: |
T = +20 °C: 424.8094169 V T = -25 °C: 388.3102076 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
