Show Hamamatsu Avalanche Photo Diode 1601016789
This is all the information about APD 1601016789. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016789 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1601016789/2515028666 |
| Unit: |
#1516 (barcode 1309015252) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.9 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
39 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10064 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.7696312 V T = -25 °C: 345.9736323 V |
| Voltage for Gain 150: |
T = +20 °C: 389.6710888 V T = -25 °C: 353.4517137 V |
| Voltage for Gain 200: |
T = +20 °C: 394.0610187 V T = -25 °C: 357.6737979 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.507605184 V-1 T = -25 °C: 4.727920469 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.695212762 V-1 T = -25 °C: 9.266599539 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.6779264 V-1 T = -25 °C: 15.97903944 V-1 |
| Break-through voltage: |
T = +20 °C: 408.3793553 V T = -25 °C: 372.2018218 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
