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Show Hamamatsu Avalanche Photo Diode 1601016785


This is all the information about APD 1601016785. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1601016785
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C12
Break-through voltage: 425 V
Voltage for Gain 100 (T=+25°C): 396.1 V
Dark current: 5.3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 428
Position in grid: 6
Arrival for irradiation: 29. Sep 2017
Sent for analysis after irradiation: 26. Nov 2018
Return for assembly: none
   
Irradiation:  
Date: 22. Nov 2018
Dose used: 37 Gy
Temperature: 20 °C
Position: none
Bias voltage: none     
   
Annealing:  
Date: 23. Nov 2018
Temperature: 80 °C
Duration: 48 h
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
26. Nov 2018 15:08:48 CET markus.moritz
29. Sep 2017 13:46:17 CEST markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:29:52 CEST Tobias Assigned to grid via information extracted from APD DB.
23. Jun 2016 10:42:18 CEST Tobias Imported from Hamamatsu datasheet.