Show Hamamatsu Avalanche Photo Diode 1601016784
This is all the information about APD 1601016784. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016784 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D13 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
397 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
35 |
| Position in Box: |
9 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10056 |
| |
|
| Shipment: |
|
| Grid number: |
428 |
| Position in grid: |
5 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
0 V (connected) |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.5082256 V T = -25 °C: 360.7722261 V |
| Voltage for Gain 150: |
T = +20 °C: 405.4964266 V T = -25 °C: 368.6206834 V |
| Voltage for Gain 200: |
T = +20 °C: 409.9328262 V T = -25 °C: 373.0301351 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.565374258 V-1 T = -25 °C: 4.460703407 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.451102284 V-1 T = -25 °C: 8.962837789 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.80791837 V-1 T = -25 °C: 14.07617098 V-1 |
| Break-through voltage: |
T = +20 °C: 425.7514255 V T = -25 °C: 388.8614265 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
