Show Hamamatsu Avalanche Photo Diode 1601016783
This is all the information about APD 1601016783. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1601016783 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D02 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
382 V |
Dark current: |
6.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
35 |
Position in Box: |
8 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10056 |
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Shipment: |
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Grid number: |
428 |
Position in grid: |
4 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
26. Nov 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
22. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
23. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.0379405 V T = -25 °C: 347.1523251 V |
Voltage for Gain 150: |
T = +20 °C: 390.9741845 V T = -25 °C: 354.6518953 V |
Voltage for Gain 200: |
T = +20 °C: 395.3863922 V T = -25 °C: 358.8822733 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.342219621 V-1 T = -25 °C: 4.859348094 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.859501231 V-1 T = -25 °C: 9.317831956 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.04271132 V-1 T = -25 °C: 14.90539055 V-1 |
Break-through voltage: |
T = +20 °C: 410.2193882 V T = -25 °C: 373.4585765 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history