Show Hamamatsu Avalanche Photo Diode 1601016778
This is all the information about APD 1601016778. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016778 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C02 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
382 V |
| Dark current: |
5.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
35 |
| Position in Box: |
5 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10056 |
| |
|
| Shipment: |
|
| Grid number: |
428 |
| Position in grid: |
0 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.7401438 V T = -25 °C: 346.8576283 V |
| Voltage for Gain 150: |
T = +20 °C: 390.6576534 V T = -25 °C: 354.3048916 V |
| Voltage for Gain 200: |
T = +20 °C: 395.057255 V T = -25 °C: 358.501944 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.396956846 V-1 T = -25 °C: 4.938137738 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.957380587 V-1 T = -25 °C: 9.494151597 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.15624859 V-1 T = -25 °C: 15.19804331 V-1 |
| Break-through voltage: |
T = +20 °C: 408.8921717 V T = -25 °C: 372.0291562 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
