Show Hamamatsu Avalanche Photo Diode 1601016745
This is all the information about APD 1601016745. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016745 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
393.7 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
34 |
| Position in Box: |
45 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10056 |
| |
|
| Shipment: |
|
| Grid number: |
426 |
| Position in grid: |
9 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
16. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
30. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.2363902 V T = -25 °C: 357.6823498 V |
| Voltage for Gain 150: |
T = +20 °C: 402.1485584 V T = -25 °C: 365.4072012 V |
| Voltage for Gain 200: |
T = +20 °C: 406.5584711 V T = -25 °C: 369.7469376 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.635878039 V-1 T = -25 °C: 4.502832344 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.740117477 V-1 T = -25 °C: 9.282548703 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.80328809 V-1 T = -25 °C: 14.80023024 V-1 |
| Break-through voltage: |
T = +20 °C: 421.8436741 V T = -25 °C: 384.9214244 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
