Show Hamamatsu Avalanche Photo Diode 1601016729
This is all the information about APD 1601016729. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1601016729 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2410026722/1601016729 |
| Unit: |
#3428 (barcode 1309036417) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F10 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
392.8 V |
| Dark current: |
6.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
34 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10056 |
| |
|
| Shipment: |
|
| Grid number: |
425 |
| Position in grid: |
14 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.0799603 V T = -25 °C: 356.5241466 V |
| Voltage for Gain 150: |
T = +20 °C: 400.9643901 V T = -25 °C: 364.2500605 V |
| Voltage for Gain 200: |
T = +20 °C: 405.3391778 V T = -25 °C: 368.579045 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.388578313 V-1 T = -25 °C: 4.57902694 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.10818351 V-1 T = -25 °C: 8.649462499 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.71086709 V-1 T = -25 °C: 15.66725763 V-1 |
| Break-through voltage: |
T = +20 °C: 420.6653612 V T = -25 °C: 383.8150422 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
