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Show Hamamatsu Avalanche Photo Diode 1503016673


This is all the information about APD 1503016673. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1503016673
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: unknown
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: H10
Break-through voltage: 419 V
Voltage for Gain 100 (T=+25°C): 393.8 V
Dark current: 4.9 nA
   
Screening Logistics:  
Available: Yes
Storage Box: none
Position in Box: none
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: 430
Position in grid: 2
Arrival for irradiation: 29. Sep 2017
Sent for analysis after irradiation: 16. Jan 2019
Return for assembly: none
   
Irradiation:  
Date: 29. Nov 2018
Dose used: 37 Gy
Temperature: 20 °C
Position: none
Bias voltage: none     
   
Annealing:  
Date: 30. Nov 2018
Temperature: 80 °C
Duration: 48 h
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 150: T = +20 °C: none     T = -25 °C: none
Voltage for Gain 200: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 100: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 150: T = +20 °C: none     T = -25 °C: none
Gain/Voltage slope at M = 200: T = +20 °C: none     T = -25 °C: none
Break-through voltage: T = +20 °C: none     T = -25 °C: none
   
Notes:


Characteristics

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Progression of the current during irradiation

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Version history

Time Author Change comment
18. Jan 2019 14:41:08 CET markus.moritz
03. Dec 2018 14:09:58 CET markus.moritz
29. Sep 2017 12:32:44 CEST markus.moritz Entered arrival for irradiation date.
01. Aug 2016 17:29:53 CEST Tobias Assigned to grid via information extracted from APD DB.
23. Jun 2016 10:42:16 CEST Tobias Imported from Hamamatsu datasheet.