Show Hamamatsu Avalanche Photo Diode 1503016668
This is all the information about APD 1503016668. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1503016668 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F09 |
| Break-through voltage: |
422 V |
| Voltage for Gain 100 (T=+25°C): |
394.2 V |
| Dark current: |
5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
377 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
429 |
| Position in grid: |
18 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
394.2 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.3286499 V T = -25 °C: 357.6739359 V |
| Voltage for Gain 150: |
T = +20 °C: 402.2704162 V T = -25 °C: 365.4459142 V |
| Voltage for Gain 200: |
T = +20 °C: 406.6723843 V T = -25 °C: 369.7903764 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.431504783 V-1 T = -25 °C: 4.778078781 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.600886868 V-1 T = -25 °C: 8.612194703 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.96200748 V-1 T = -25 °C: 14.85423245 V-1 |
| Break-through voltage: |
T = +20 °C: 421.5528581 V T = -25 °C: 385.2070717 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
