Show Hamamatsu Avalanche Photo Diode 1503016657
This is all the information about APD 1503016657. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1503016657 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E03 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
388.9 V |
| Dark current: |
4.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
377 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
429 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
2 |
| Bias voltage: |
388.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.5712823 V T = -25 °C: 354.0790304 V |
| Voltage for Gain 150: |
T = +20 °C: 397.549656 V T = -25 °C: 361.7020467 V |
| Voltage for Gain 200: |
T = +20 °C: 401.969229 V T = -25 °C: 366.0172243 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.324309705 V-1 T = -25 °C: 4.763208178 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.183729702 V-1 T = -25 °C: 10.05149335 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.25073556 V-1 T = -25 °C: 15.01452831 V-1 |
| Break-through voltage: |
T = +20 °C: 417.8223033 V T = -25 °C: 381.1341835 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
