Show Hamamatsu Avalanche Photo Diode 1502016630
This is all the information about APD 1502016630. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016630 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
421 V |
| Voltage for Gain 100 (T=+25°C): |
393.2 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
30 |
| Position in Box: |
50 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10049 |
| |
|
| Shipment: |
|
| Grid number: |
423 |
| Position in grid: |
8 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
05. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 393.4088249 V T = -25 °C: 357.1062524 V |
| Voltage for Gain 150: |
T = +20 °C: 401.3294227 V T = -25 °C: 364.847464 V |
| Voltage for Gain 200: |
T = +20 °C: 405.7384465 V T = -25 °C: 369.186954 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.609617367 V-1 T = -25 °C: 4.537608311 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.963024134 V-1 T = -25 °C: 8.68377526 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.19100626 V-1 T = -25 °C: 14.57099297 V-1 |
| Break-through voltage: |
T = +20 °C: 420.8566073 V T = -25 °C: 384.7623853 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
