Show Hamamatsu Avalanche Photo Diode 1502016611
This is all the information about APD 1502016611. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016611 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D13 |
| Break-through voltage: |
426 V |
| Voltage for Gain 100 (T=+25°C): |
397.1 V |
| Dark current: |
4.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
303 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10372 |
| |
|
| Shipment: |
|
| Grid number: |
422 |
| Position in grid: |
12 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
397.1 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 397.4532298 V T = -25 °C: 360.8281327 V |
| Voltage for Gain 150: |
T = +20 °C: 405.4418115 V T = -25 °C: 368.6041518 V |
| Voltage for Gain 200: |
T = +20 °C: 409.8553004 V T = -25 °C: 372.9381102 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.357028801 V-1 T = -25 °C: 4.693751244 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.395942774 V-1 T = -25 °C: 9.340360336 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.3253997 V-1 T = -25 °C: 14.52984624 V-1 |
| Break-through voltage: |
T = +20 °C: 425.5828198 V T = -25 °C: 388.9539321 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
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| No characteristics available! |
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Progression of the current during irradiation
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Version history
