Show Hamamatsu Avalanche Photo Diode 1502016604
This is all the information about APD 1502016604. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016604 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C10 |
| Break-through voltage: |
420 V |
| Voltage for Gain 100 (T=+25°C): |
391.3 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
303 |
| Position in Box: |
6 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10372 |
| |
|
| Shipment: |
|
| Grid number: |
422 |
| Position in grid: |
6 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
391.3 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 391.9106637 V T = -25 °C: 355.5455594 V |
| Voltage for Gain 150: |
T = +20 °C: 399.8792356 V T = -25 °C: 363.2026635 V |
| Voltage for Gain 200: |
T = +20 °C: 404.2875246 V T = -25 °C: 367.5111039 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.526706639 V-1 T = -25 °C: 4.566436947 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.048723458 V-1 T = -25 °C: 8.925894172 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.84839085 V-1 T = -25 °C: 15.60864765 V-1 |
| Break-through voltage: |
T = +20 °C: 419.8163946 V T = -25 °C: 383.057885 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
