Show Hamamatsu Avalanche Photo Diode 1502016599
This is all the information about APD 1502016599. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016599 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Mainz |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F15 |
| Break-through voltage: |
419 V |
| Voltage for Gain 100 (T=+25°C): |
391.7 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
303 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10372 |
| |
|
| Shipment: |
|
| Grid number: |
422 |
| Position in grid: |
2 |
| Arrival for irradiation: |
30. Oct 2017 |
| Sent for analysis after irradiation: |
10. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
10. Nov 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
1 |
| Bias voltage: |
391.7 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 392.096793 V T = -25 °C: 355.6145938 V |
| Voltage for Gain 150: |
T = +20 °C: 400.0939842 V T = -25 °C: 363.2826526 V |
| Voltage for Gain 200: |
T = +20 °C: 404.5269541 V T = -25 °C: 367.5920311 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.446303286 V-1 T = -25 °C: 4.534803863 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.704710755 V-1 T = -25 °C: 8.803388944 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.10562233 V-1 T = -25 °C: 15.43627713 V-1 |
| Break-through voltage: |
T = +20 °C: 418.4492648 V T = -25 °C: 382.524202 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
