Show Hamamatsu Avalanche Photo Diode 1502016592
This is all the information about APD 1502016592. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016592 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B06 |
| Break-through voltage: |
417 V |
| Voltage for Gain 100 (T=+25°C): |
388.4 V |
| Dark current: |
4.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
31 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10050 |
| |
|
| Shipment: |
|
| Grid number: |
421 |
| Position in grid: |
15 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.2615135 V T = -25 °C: 352.045521 V |
| Voltage for Gain 150: |
T = +20 °C: 396.2072887 V T = -25 °C: 359.6918536 V |
| Voltage for Gain 200: |
T = +20 °C: 400.6279623 V T = -25 °C: 364.0121483 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.363056578 V-1 T = -25 °C: 4.649854442 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.126439439 V-1 T = -25 °C: 8.958314872 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.88943868 V-1 T = -25 °C: 15.21108013 V-1 |
| Break-through voltage: |
T = +20 °C: 415.9218134 V T = -25 °C: 379.7659412 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
