Show Hamamatsu Avalanche Photo Diode 1502016591
This is all the information about APD 1502016591. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016591 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.4 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
31 |
| Position in Box: |
22 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10050 |
| |
|
| Shipment: |
|
| Grid number: |
421 |
| Position in grid: |
14 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.0265814 V T = -25 °C: 351.8023207 V |
| Voltage for Gain 150: |
T = +20 °C: 395.9780227 V T = -25 °C: 359.4112367 V |
| Voltage for Gain 200: |
T = +20 °C: 400.3987105 V T = -25 °C: 363.7135183 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.4082222 V-1 T = -25 °C: 4.716797894 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.177764912 V-1 T = -25 °C: 9.079035077 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.85802422 V-1 T = -25 °C: 15.36942973 V-1 |
| Break-through voltage: |
T = +20 °C: 415.7008631 V T = -25 °C: 379.304677 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history