Show Hamamatsu Avalanche Photo Diode 1502016584
This is all the information about APD 1502016584. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016584 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C07 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.2 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
31 |
| Position in Box: |
15 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10050 |
| |
|
| Shipment: |
|
| Grid number: |
421 |
| Position in grid: |
7 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.0050679 V T = -25 °C: 351.8157745 V |
| Voltage for Gain 150: |
T = +20 °C: 395.968487 V T = -25 °C: 359.4380158 V |
| Voltage for Gain 200: |
T = +20 °C: 400.375067 V T = -25 °C: 363.7433411 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.414813256 V-1 T = -25 °C: 4.721711174 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.444505941 V-1 T = -25 °C: 9.158705074 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.20544518 V-1 T = -25 °C: 15.68563858 V-1 |
| Break-through voltage: |
T = +20 °C: 415.2247779 V T = -25 °C: 378.9289827 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
