Show Hamamatsu Avalanche Photo Diode 1502016582
This is all the information about APD 1502016582. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1502016582 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C06 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
387.1 V |
Dark current: |
4.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
31 |
Position in Box: |
13 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10050 |
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Shipment: |
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Grid number: |
421 |
Position in grid: |
5 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
26. Nov 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
22. Nov 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
23. Nov 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 387.743122 V T = -25 °C: 351.5238318 V |
Voltage for Gain 150: |
T = +20 °C: 395.6906064 V T = -25 °C: 359.1379777 V |
Voltage for Gain 200: |
T = +20 °C: 400.1026357 V T = -25 °C: 363.4249867 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.517209624 V-1 T = -25 °C: 4.834590407 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.679008826 V-1 T = -25 °C: 9.464285832 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.69502101 V-1 T = -25 °C: 14.49366747 V-1 |
Break-through voltage: |
T = +20 °C: 415.117453 V T = -25 °C: 378.7497263 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history