Show Hamamatsu Avalanche Photo Diode 1502016581
This is all the information about APD 1502016581. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016581 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B05 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.9 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
31 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10050 |
| |
|
| Shipment: |
|
| Grid number: |
421 |
| Position in grid: |
4 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.7645591 V T = -25 °C: 351.5776381 V |
| Voltage for Gain 150: |
T = +20 °C: 395.7020456 V T = -25 °C: 359.1877124 V |
| Voltage for Gain 200: |
T = +20 °C: 400.1070314 V T = -25 °C: 363.4809763 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.503055513 V-1 T = -25 °C: 4.809588614 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.633224853 V-1 T = -25 °C: 9.390489166 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.54451622 V-1 T = -25 °C: 14.29669837 V-1 |
| Break-through voltage: |
T = +20 °C: 415.1876207 V T = -25 °C: 378.9818723 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
