Show Hamamatsu Avalanche Photo Diode 1502016570
This is all the information about APD 1502016570. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1502016570 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1602016816/1502016570 |
| Unit: |
#866 (barcode 1309009497) |
| Preamp: |
4414 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A08 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
388.3 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
30 |
| Position in Box: |
47 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10049 |
| |
|
| Shipment: |
|
| Grid number: |
420 |
| Position in grid: |
13 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
05. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.7811018 V T = -25 °C: 351.7076743 V |
| Voltage for Gain 150: |
T = +20 °C: 395.7391634 V T = -25 °C: 359.3292436 V |
| Voltage for Gain 200: |
T = +20 °C: 400.1533842 V T = -25 °C: 363.627878 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.461132134 V-1 T = -25 °C: 4.730763688 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.565995038 V-1 T = -25 °C: 9.198534416 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.32923708 V-1 T = -25 °C: 15.60695861 V-1 |
| Break-through voltage: |
T = +20 °C: 413.9229396 V T = -25 °C: 378.4799013 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
