Show Hamamatsu Avalanche Photo Diode 1417016435
This is all the information about APD 1417016435. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1417016435 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D05 |
| Break-through voltage: |
423 V |
| Voltage for Gain 100 (T=+25°C): |
394 V |
| Dark current: |
8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
377 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
415 |
| Position in grid: |
5 |
| Arrival for irradiation: |
29. Sep 2017 |
| Sent for analysis after irradiation: |
03. Nov 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
26. Oct 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
4 |
| Bias voltage: |
394 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 394.256918 V T = -25 °C: 357.5617703 V |
| Voltage for Gain 150: |
T = +20 °C: 402.2255042 V T = -25 °C: 365.2378738 V |
| Voltage for Gain 200: |
T = +20 °C: 406.652439 V T = -25 °C: 369.5444355 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.434575281 V-1 T = -25 °C: 4.548576714 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.679278699 V-1 T = -25 °C: 8.890928018 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.98134222 V-1 T = -25 °C: 15.60421794 V-1 |
| Break-through voltage: |
T = +20 °C: 422.3771507 V T = -25 °C: 385.4036777 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
