Show Hamamatsu Avalanche Photo Diode 1416016355
This is all the information about APD 1416016355. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1416016355 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
B09 |
Break-through voltage: |
423 V |
Voltage for Gain 100 (T=+25°C): |
394.4 V |
Dark current: |
5.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
323 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10508 |
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Shipment: |
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Grid number: |
412 |
Position in grid: |
3 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 395.1960637 V T = -25 °C: 358.5411971 V |
Voltage for Gain 150: |
T = +20 °C: 403.1044008 V T = -25 °C: 366.2256447 V |
Voltage for Gain 200: |
T = +20 °C: 407.5196925 V T = -25 °C: 370.5485641 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.455429799 V-1 T = -25 °C: 4.557389519 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.838918482 V-1 T = -25 °C: 8.923544594 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.59350095 V-1 T = -25 °C: 15.58990986 V-1 |
Break-through voltage: |
T = +20 °C: 422.6225846 V T = -25 °C: 386.1866392 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history