Show Hamamatsu Avalanche Photo Diode 1415016286
This is all the information about APD 1415016286. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1415016286 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A06 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
385.4 V |
Dark current: |
8 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
289 |
Position in Box: |
39 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10201 |
|
|
Shipment: |
|
Grid number: |
409 |
Position in grid: |
13 |
Arrival for irradiation: |
29. Sep 2017 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
22. Feb 2018 |
Dose used: |
30 Gy |
Temperature: |
25 °C |
Position: |
2 |
Bias voltage: |
0 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 384.7041611 V T = -25 °C: 349.1924007 V |
Voltage for Gain 150: |
T = +20 °C: 392.6534977 V T = -25 °C: 356.6580508 V |
Voltage for Gain 200: |
T = +20 °C: 397.0698455 V T = -25 °C: 360.8476145 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.619132439 V-1 T = -25 °C: 4.767951519 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.089303971 V-1 T = -25 °C: 9.640079137 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.08587369 V-1 T = -25 °C: 15.12258098 V-1 |
Break-through voltage: |
T = +20 °C: 408.199372 V T = -25 °C: 374.4855167 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history